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  Datasheet File OCR Text:
 SMD Type
Medium Power Transistor 2SD2537
Transistors
Features
High DC current gain. High emitter-base voltage. Low saturation voltage.
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 30 25 12 1.2 2 150 -55 to +150 Unit V V V A W
Electrical Characteristics Ta = 25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Output capacitance Transition frequency Symbol BVCBO BVCEO BVEBO ICBO IEBO IC=10iA IC=1mA IE=10iA VCB=30V VEB=12V Testconditons Min 30 25 12 0.3 0.3 0.3 820 200 20 2700 MHz pF Typ Max Unit V V V iA iA V
VCE(sat) IC=500mA, IB=10mA hFE fT Cob VCE=5V, IC=0.5A VCE=10V, IE= -50mA, f=100MHz VCB=10V, IE=0A, f=1MHz
hFE Classification
Marking Rank hFE V 820 1800 DV W 1200 2700
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